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RF-Series Horizontal Tube Wafer Processing Systems |
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The RF-Series
wafer processing tools were designed specifically to meet the oxidation,
diffusion, and CVD requirements of the smaller wafer lot sizes often
encountered in MEMS, MOEMS, Photonics, and R&D fabs. Without any
compromise in performance, or process specifications, the smaller system
footprint and lower overall form factors of the RF-Series furnace saves
costly clean room space, reduces facilities loading and power
requirements, and improves
ergonomic considerations for furnace operation and maintenance. Featuring HEPA filtered automated wafer loading stations, state of the art process gas delivery systems, and the highest quality materials and manufacturing techniques, the RF-Series furnaces are the production tools of choice for emerging industries as well as pilot line production and device development. |
| Model: | RF150 Series | RF200 Series | RF300 Series |
| Substrate Sizes: | 150mm | 200mm | 300mm |
| Temperature Range: | 400-1250°C | 400-1250°C | 400-1250°C |
| Furnace Flatzone(inches): | 12" | 12" | 12" |
| Number of Tubes/stack: | 1 to 4 | 1 to 3 | 1 or 2 |
| Process Control System Options: |
Thermco TMX 9-12k |
Thermco
TMX 9-12k (Brooks) SEMY Mypro ICCI SLC99 |
Thermco
TMX 9-12k (Brooks) SEMY Mypro ICCI SLC99 |
| Supervisory System Options: |
Brooks |
Brooks (SEMY) JGA ICCI GMI-Host |
Brooks (SEMY) JGA ICCI GMI-Host |
| Typical Atmospheric Processes Supported: | Pyrogenic
Oxidations (Internal/External Torch) DI-H2O derived Oxidation (special hi-saturation, auto-fill, long cycle) Diffusion Dopant Processes (liquid and solid source) Anneal (inert and reducing atmosphere) |
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| Typical LPCVD Processes Supported: | Poly-Silicon
(lo-temp, amorphous, hi-temp H2, and doped) Silicon Nitride (standard ratio and low-stress films) LTO, PSG, BPSG TEOS Vacuum Anneal |
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